收藏本站
November 2013
FDB045AN08A0
N-Channel PowerTrench ? MOSFET
75 V, 80 A, 4 .5 m Ω
Features
? R DS(on) = 3. 9 m ? ( Typ.) @ V GS = 10 V, I D = 80 A
? Q G (tot) = 9 2 nC ( Typ.) @ V GS = 10 V
? Low Miller Charge
Applications
? Synchronous Rectification for ATX / Server / Telecom PSU
? Battery Protection Circuit
? Motor drives and Uninterruptible Power Supplies
? Low Q rr Body Diode
? UIS Capability (Single Pulse and Repetitive Pulse)
Formerly developmental type 82 6 84
D
D
G
S
D 2 -PAK
G
S
MOSFET Maximum Ratings T C = 25°C unless otherwise noted
Symbol
V DSS
V GS
Drain to Source Voltage
Gate to Source Voltage
Parameter
FDB045AN08A0
75
± 20
Units
V
V
Drain Current
I D
E AS
P D
Continuous (T C < 137 o C, V GS = 10V)
Continuous (T amb = 25 o C, V GS = 10V, with R θ JA = 43 o C/W)
Pulsed
Single Pulse Avalanche Energy (Note 1)
Power dissipation
Derate above 25 o C
90
19
Figure 4
600
310
2.0
A
A
A
mJ
W
W/ o C
T J , T STG
Operating and Storage Temperature
-55 to 175
o
C
Thermal Characteristics
R θ JC
Thermal Resistance Junction to Case
0.48
o
C/W
R θ JA
Thermal Resistance Junction to Ambient (Note 2)
62
o C/W
R θ JA
Thermal Resistance Junction to Ambient, 1in 2 copper pad area
43
o
C/W
?2002 Fairchild Semiconductor Corporation
FDB045AN08A0 Rev. C1
1
www.fairchildsemi.com
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
FDB047N10 MOSFET N-CH 100V 120A D2PAK
FDB075N15A MOSFET N-CH 150V 130A D2PAK
FDB082N15A MOSFET N CH 150V 105A D2PAK
FDB088N08 MOSFET N-CH 75V 75A D2PAK
FDB110N15A MOSFET N-CH 150V 92A D2PAK
FDB120N10 MOSFET N-CH 100V 74A D2PAK
FDB12N50FTM_WS MOSFET N-CH 500V 11.5A D2PAK
FDB12N50TM MOSFET N-CH 500V 11.5A D2PAK
相关代理商/技术参数
FDB045AN08A0 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET
FDB045AN08A0_06 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel PowerTrench㈢ MOSFET 75V, 80A, 4.5mヘ
FDB045AN08A0_10 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel PowerTrench?? MOSFET 75V, 80A, 4.5m
FDB045AN08A0_12 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel PowerTrench?? MOSFET 75V, 80A, 4.5m
FDB045AN08A0_F085 功能描述:MOSFET 75V N-CHAN PwrTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDB045AN08A0_Q 功能描述:MOSFET N-Channel UltraFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDB045AN08A0_SN00237 制造商:Fairchild Semiconductor Corporation 功能描述:
FDB047N10 功能描述:MOSFET 100V N-Channel PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube